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Same model may have multiple batches, images only for reference.
IGW50N60TPXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IGW50N60TPXKSA1

Part No IGW50N60TPXKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 319.2W TO247
Datasheet
IGW50N60TPXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 50A
Maximum Power Dissipation 319.2W
Total Switching Energy(Ets) 1.53mJ (on), 850μJ (off)
Input Type Standard
Gate Charge 249nC
Turn-on and Turn-off delay time 20ns/215ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045153-IGW50N60TPXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian IGW50N60TPXKSA1 CAD Model

Description

The Infineon Technologies IGW50N60TPXKSA1 IGBT is a Trench Field Stop transistor with a VCEO maximum collector-emitter breakdown voltage of 600V, maximum current collector of 80A, and maximum power dissipation of 319.2W.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 319.2W
  • Gate Charge: 249nC
  • Operating Temperature: -40°C to 175°C (TJ)
  • Package: PG-TO247-3
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 215ns
  • Collector-Emitter Saturation Voltage(Max): 1.8V @ 15V, 50A
  • Total Switching Energy(Ets): 1.53mJ (on), 850μJ (off)
  • Applications: Motor drives, power supplies, and inverters

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