The Infineon Technologies IGW40T120 is an NPT, trench field stop IGBT transistor designed for use in discrete semiconductor products.

• Type: NPT, trench field stop IGBT transistor
• Application: Discrete semiconductor products
• Current Collector (Max): 75A
• VCEO (Max): 1200V
• Power Dissipation (Max): 270W
• Pulsed Collector Current: 105A
• Collector-Emitter Saturation Voltage (Max): 2.3V @ 15V, 40A
• Total Switching Energy (Ets): 6.5mJ
• Turn-on Delay Time: 48ns
• Turn-off Delay Time: 480ns
• Package: PG-TO247-3
• Mounting Type: Through Hole
• Status: Active
• Popularity: Medium
• Market: Open market
• Supply and Demand Status: Sufficient