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Same model may have multiple batches, images only for reference.
IGW03N120H2FKSA1 Real Image
Same model may have multiple batches, images only for reference.

IGW03N120H2FKSA1

Part No IGW03N120H2FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
IGW03N120H2FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Last Time Buy
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 9.6 A
Current - Collector Pulsed (Icm) 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5 W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22 nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Base Product Number IGW03N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1314703-IGW03N120H2FKSA1
Ultra Librarian 3D Model Ultra Librarian IGW03N120H2FKSA1 CAD Model

Description

The Infineon Technologies 1314703-IGW03N120H2FKSA1 is a TO-247-3 package IGBT with a voltage collector-emitter breakdown of 1200V and a maximum power of 62.5W. It has a maximum current collector of 9.6A and a maximum current collector pulsed of 9.9A. The 1314703-IGW03N120H2FKSA1 has a switching energy of 290μJ and a gate charge of 22nC. It is designed for use in discrete semiconductor products and has a temperature range of -40°C to 150°C (TJ). The 1314703-IGW03N120H2FKSA1 is currently on last time buy.

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