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Same model may have multiple batches, images only for reference.
IGLD60R190D1AUMA3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IGLD60R190D1AUMA3

Part No IGLD60R190D1AUMA3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description GAN HV
Datasheet
IGLD60R190D1AUMA3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202359-IGLD60R190D1AUMA3
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolGaN™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Vgs(th) (Max) @ Id 1.6V @ 960µA
Ultra Librarian 3D Model Ultra Librarian IGLD60R190D1AUMA3 CAD Model

Description

Introducing the Infineon Technologies CoolGaN™, a discrete semiconductor product that excels in power transistor applications.

  • Manufacturer: Infineon Technologies
  • Series: CoolGaN™
  • Product Type: FETs and MOSFETs - Single FETs and MOSFETs
  • Technology: GaNFET (Gallium Nitride)
  • Vdss: 600V
  • Id (25°C): 10A
  • Packaging Options: Tape & Reel and Cut Tape
  • Vgs(th) @ Id: 1.6V @ 960µA

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Quantity Unit Price Ext. Price
12+ $5.1133 $61.3596
28+ $4.1956 $117.4768
43+ $4.0644 $174.7692
59+ $3.9334 $232.0706
76+ $3.8023 $288.9748
102+ $3.4089 $347.7078
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