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IDWD40G120C5XKSA1

Part No IDWD40G120C5XKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 110A TO247 / Diode 1200 V 110A Through Hole PG-TO247-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 110A
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 40 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 332 µA @ 1200 V
Capacitance @ Vr, F 2592pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package PG-TO247-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDWD40
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1356189-IDWD40G120C5XKSA1
Ultra Librarian 3D Model Ultra Librarian IDWD40G120C5XKSA1 CAD Model

Description

The IDWD40G120C5XKSA1 is a silicon carbide (SiC) Schottky diode manufactured by Infineon Technologies.

  • Series: CoolSiC+
  • Package: TO-247-2
  • Maximum Reverse Voltage (Vr): 1200V
  • Average Rectified Current (Io): 110A
  • Forward Voltage (Vf): 1.65V @ 40A
  • Recovery Time: No recovery time for currents greater than 500mA
  • Reverse Recovery Time (trr): 0 ns
  • Reverse Leakage Current: 332μA @ 1200V
  • Capacitance: 2592pF @ 1V and 1MHz
  • REACH: Unaffected
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.6537 $67.9611
7+ $18.5878 $130.1146
10+ $18.0068 $180.0680
14+ $17.4259 $243.9626
18+ $16.8451 $303.2118
23+ $15.1025 $347.3575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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