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Same model may have multiple batches, images only for reference.
IDH04S60CAKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IDH04S60CAKSA1

Part No IDH04S60CAKSA1
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 600V 4A TO220-2 / Diode Silicon Carbide Schottky 600 V 4A (DC) Through Hole PG-TO220-2-2
Datasheet
IDH04S60CAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 600 V
Capacitance @ Vr, F 130pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-2
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH04
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names IDH04S60C-ND,2156-IDH04S60CAKSA1,IDH04S60C,INFINFIDH04S60CAKSA1,SP000657976
Standard Package 500
Win Source Part Number 1064303-IDH04S60CAKSA1
Ultra Librarian 3D Model Ultra Librarian IDH04S60CAKSA1 CAD Model

Description

The Infineon Technologies IDH04S60CAKSA1 is a Silicon Carbide Schottky diode with a voltage - DC reverse (Vr) (Max) of 600V and a current - average rectified (Io) of 4A (DC).

  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 600 V
  • Capacitance @ Vr, F: 130pF @ 1V, 1MHz
  • Package: TO-220-2

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