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Same model may have multiple batches, images only for reference.
GPS60B120KDP Real Image
Same model may have multiple batches, images only for reference.

GPS60B120KDP

Part No GPS60B120KDP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 105A 595W SUPER247
Datasheet
GPS60B120KDP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 105A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2.75V @ 15V, 60A
Maximum Power Dissipation 595W
Total Switching Energy(Ets) 3.21mJ (on), 4.78mJ (off)
Input Type Standard
Gate Charge 340nC
Testing Conditions 600V, 15A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 180ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 067684-GPS60B120KDP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GPS60B120KDP CAD Model

Description

The Infineon Technologies GPS60B120KDP is a through-hole IGBT transistor.

  • Input Type: Standard
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • IGBT Type: NPT
  • Reverse Recovery Time: 180ns
  • Gate Charge: 340nC
  • Package: SUPER-247 (TO-274AA)
  • Maximum Current Collector: 105A
  • Maximum Power Dissipation: 595W
  • Pulsed Collector Current: 240A
  • Collector-Emitter Saturation Voltage: 2.75V @ 15V, 60A
  • Total Switching Energy: 3.21mJ (on), 4.78mJ (off)
  • Supply and Demand: Limited

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Quantity Unit Price Ext. Price
1+ $148.6104 $148.6104
2+ $143.6566 $287.3132
3+ $128.7952 $386.3856
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