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Same model may have multiple batches, images only for reference.
FZ400R12KS4HOSA1 Real Image
Same model may have multiple batches, images only for reference.

FZ400R12KS4HOSA1

Part No FZ400R12KS4HOSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MOD 1200V 510A 2500W / IGBT Module Single 1200 V 510 A 2500 W Chassis Mount Module
Datasheet
FZ400R12KS4HOSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Modules
Manufacturer Infineon Technologies
Packaging Tray
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 510 A
Power - Max 2500 W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 400A
Current - Collector Cutoff (Max) 5 mA
Input Capacitance (Cies) @ Vce 26 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -40°C ~ 125°C
Mounting Chassis Mount
Case / Package Module
Supplier Device Package Module
Base Product Number FZ400R12
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FZ400R12KS4,SP000100708
Standard Package 10
Win Source Part Number 1325552-FZ400R12KS4HOSA1
Ultra Librarian 3D Model Ultra Librarian FZ400R12KS4HOSA1 CAD Model

Description

Infineon Technologies FZ400R12KS4HOSA1 is a single IGBT type transistor module.

  • Maximum Voltage Collector Emitter Breakdown (Max): 1200V
  • Maximum Collector Current (Ic): 510A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 400A
  • Current Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
  • Maximum Power: 2500W
  • Temperature Range: -40°C ~ 125°C

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