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Same model may have multiple batches, images only for reference.
BSP149H6906XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP149H6906XTSA1

Part No BSP149H6906XTSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 200V 660MA SOT223-4
Datasheet
BSP149H6906XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1201668-BSP149H6906XTSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series SIPMOS®
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature Operating Temperature
Ultra Librarian 3D Model Ultra Librarian BSP149H6906XTSA1 CAD Model

Description

The Infineon Technologies SIPMOS MOSFET is a single N-channel FET with a drain to source voltage of 200V.

  • Technology: MOSFET
  • FET Type: N-Channel
  • Vdss: 200V
  • Application: Discrete Semiconductor
  • Package: Tape & Reel

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