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BSO201S

Part No BSO201S
Manufacturer Infineon Technologies
Catalog Miscellaneous
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Categories Uncategorized
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 819735-BSO201S
Ultra Librarian 3D Model Ultra Librarian BSO201S CAD Model

Description

The BSO201S is an N-channel MOSFET manufactured by Infineon Technologies. It is designed for use in high-efficiency power switching applications such as DC-DC converters, power management, and motor control. This MOSFET features low on-resistance and fast switching times, which contribute to improved efficiency and reduced power losses.

Applications

  • DC-DC Converters: Used as a switching element in various DC-DC converter topologies.
  • Power Management Systems: Employed in power distribution and regulation circuits.
  • Motor Control: Utilized in motor driving circuits for efficient power delivery to the motor.
  • Lighting Systems: Used in LED drivers and other lighting control circuits.
  • Synchronous Rectification: Can be used as a synchronous rectifier to improve efficiency in power supplies.

Features

  • N-Channel MOSFET: Operates with a positive gate-source voltage for switching.
  • Low On-Resistance (RDS(on)): Minimizes conduction losses and improves efficiency.
  • Fast Switching Speed: Reduces switching losses and allows for high-frequency operation.
  • Logic Level Gate Drive: Can be directly driven by logic-level signals.
  • RoHS Compliant: Compliant with Restriction of Hazardous Substances directive.

Benefits

  • High Efficiency: Reduces power consumption and improves overall system efficiency.
  • Simplified Drive Circuitry: Simplifies circuit design by allowing direct logic-level gate drive.
  • Reduced Power Losses: Minimizes heat generation and improves thermal performance.
  • Environmentally Friendly: Compliant with RoHS directives.
  • Reliable Performance: Provides stable and consistent performance in various operating conditions.

Additional Details

The BSO201S MOSFET typically features a trench MOSFET structure to achieve low on-resistance and fast switching speeds. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and operating temperature range. The specific package type and thermal resistance are also crucial parameters for thermal management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3343 $53.3720
95+ $1.0949 $104.0155
145+ $1.0606 $153.7870
195+ $1.0264 $200.1480
255+ $0.9922 $253.0110
340+ $0.8896 $302.4640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,100 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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