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Same model may have multiple batches, images only for reference.
BCR141SE6327 Real Image
Same model may have multiple batches, images only for reference.

BCR141SE6327

Part No BCR141SE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description BIPOLAR DIGITAL TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr Infineon Technologies
Series Automotive, AEC-Q101
Package Bulk
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 130MHz
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6-1
Base Product Number BCR141
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 722625-BCR141SE6327
Ultra Librarian 3D Model Ultra Librarian BCR141SE6327 CAD Model

Description

The BCR141SE6327 is a bipolar transistor array integrated circuit.

  • Category: Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
  • Application: automotive
  • Standard: AEC-Q101
  • Mounting Type: surface mountable
  • Packaging: bulk
  • Package Quantity: 3,000 pieces
  • Power Rating: 250mW
  • Voltage Breakdown (Collector-Emitter): 50V
  • Maximum Collector Current: 100mA
  • Transistor Type: pre-biased dual NPN
  • Vce Saturation: 300mV @ 500μA base current and 10mA collector current
  • DC Current Gain: 50 @ 5mA collector current and 5V collector-emitter voltage

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