The 2SK1680 is an N-Channel enhancement mode power MOSFET manufactured by Inchange Semiconductor. It is designed for high-voltage, high-speed switching applications, offering a combination of performance and reliability. It is well-suited for various power electronics applications.

Applications

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Uninterruptible power supplies (UPS)
• DC-DC converters
• Lighting ballasts

Features

• N-Channel Enhancement Mode MOSFET
• High Voltage Capability
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• High Ruggedness

Benefits

• Enables high-efficiency power conversion due to low RDS(on) and fast switching speed.
• Suitable for high-voltage applications, providing design flexibility.
• Reduces switching losses, improving overall efficiency.
• Offers enhanced reliability in demanding environments.
• Simplified gate drive requirements due to enhancement mode operation.

Technical Specifications

Typical technical specifications for the 2SK1680 include:

• Drain-Source Voltage (VDSS): 600V
• Gate-Source Voltage (VGSS): ±30V
• Continuous Drain Current (ID): 8A
• Pulsed Drain Current (IDM): 24A
• RDS(on) @ VGS=10V: 1.2 Ohms
• Gate Charge (Qg): 25nC
• Turn-on Delay Time: 12ns
• Turn-off Delay Time: 20ns

The 2SK1680 is typically available in a TO-220 package. Refer to the manufacturer's datasheet for detailed specifications, application notes, and safe operating area information.