The IDT70V659S10DR is a high-speed synchronous SRAM organized as 128K x 36 or 256K x 18. It is designed for applications requiring high bandwidth and low latency memory access.

Applications

• Networking
• Telecommunications
• Data Communications
• High-Performance Computing
• Cache Memory

Features

• High-speed access time: 10ns
• Internal synchronous self-timed write
• Single 3.3V power supply
• LVTTL Compatible Inputs and Outputs
• Byte Write Enable
• Available in various package options

Benefits

• High bandwidth for improved system performance
• Simplified memory control with internal self-timed write
• Lower power consumption for energy-efficient systems
• Easy interfacing with standard logic levels
• Flexible write operation for efficient data handling

Technical Specifications

The IDT70V659S10DR operates at 3.3V. The access time is 10ns. The device offers LVTTL-compatible inputs and outputs and comes in different package options to suit various design requirements. It supports byte write enable for selective memory updates.