The H9AG9G5ANBX100 is a 64GB eMMC5.1 and 32Gb (4GB) LPDDR4X-4266 eMCP package from Hynix Semiconductor. It is a high-performance, low-power memory solution for a wide range of mobile and embedded applications.

The eMMC5.1 interface provides faster data transfer speeds than previous generations of eMMC, up to 400MB/s read and 250MB/s write. The LPDDR4X-4266 interface provides even faster data transfer speeds, up to 4266MT/s.

The H9AG9G5ANBX100 is packaged in a 11.5mm x 13mm FBGA-254 package. It is RoHS compliant and operates over a wide temperature range, from -40°C to 85°C.

Features:

• 64GB eMMC5.1 + 32Gb (4GB) LPDDR4X-4266
• High performance: up to 400MB/s read and 250MB/s write for eMMC5.1, up to 4266MT/s for LPDDR4X-4266
• Low power consumption
• Small footprint: 11.5mm x 13mm FBGA-254 package
• RoHS compliant
• Wide temperature range: -40°C to 85°C

Applications:

• Mobile devices: smartphones, tablets, wearables, etc.
• Embedded systems: automotive infotainment, industrial automation, medical devices, etc.

Benefits:

• Faster data transfer speeds: The H9AG9G5ANBX100 offers faster data transfer speeds than previous generations of eMMC and LPDDR4 memory, which can improve the performance of mobile and embedded devices.
• Lower power consumption: The H9AG9G5ANBX100 is designed for low power consumption, which can extend the battery life of mobile devices and reduce the operating costs of embedded systems.
• Smaller footprint: The H9AG9G5ANBX100 is packaged in a small FBGA-254 package, which can help to reduce the size and weight of mobile and embedded devices.
• Wider temperature range: The H9AG9G5ANBX100 operates over a wide temperature range, from -40°C to 85°C, making it suitable for use in a variety of environments.

Overall, the H9AG9G5ANBX100 is a high-performance, low-power memory solution for a wide range of mobile and embedded applications. It offers faster data transfer speeds, lower power consumption, a smaller footprint, and a wider temperature range than previous generations of eMMC and LPDDR4 memory.