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H5TQ4G63AFR-PBR

Part No H5TQ4G63AFR-PBR
Manufacturer Hynix Semiconductor
Catalog DDR
Description Incorrect partno DDR3-1600 256Mx16 (4Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 940691-H5TQ4G63AFR-PBR
Series *
Ultra Librarian 3D Model Ultra Librarian H5TQ4G63AFR-PBR CAD Model

Description

The H5TQ4G63AFR-PBR is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by Hynix Semiconductor. It is designed for high-performance memory applications, balancing speed, capacity, and power efficiency. The 'PBR' likely represents specific timing or packaging characteristics.

Applications:

  • Desktop computers
  • Laptop computers
  • Gaming consoles
  • Servers
  • Networking equipment (routers, switches)

Features:

  • DDR3 Technology: Utilizes DDR3 architecture, providing improved data transfer rates and efficiency compared to previous generations.
  • 4Gb Density: Offers a memory capacity of 4 Gigabits (512MB).
  • Operating Frequency: Supports data transfer rates up to 1600 MT/s (Mega Transfers per second), depending on the system configuration.
  • Low Voltage: Operates at a standard 1.5V, reducing power consumption and heat generation.
  • FBGA Package: Packaged in a Fine-pitch Ball Grid Array (FBGA) for efficient surface mounting and thermal dissipation.
  • RoHS Compliance: Compliant with RoHS (Restriction of Hazardous Substances) environmental standards.

Benefits:

  • Increased Bandwidth: Provides high bandwidth for demanding applications, enhancing system responsiveness and overall performance.
  • Reduced Power Consumption: Low voltage operation minimizes power consumption, contributing to longer battery life in portable devices and reducing energy costs.
  • Enhanced Performance: Improves overall system performance by enabling faster memory access and data transfer.
  • Reliable Operation: Manufactured by Hynix, a leading memory manufacturer, ensuring high reliability and quality.
  • Cost-Effective Solution: Offers a cost-effective memory solution for various applications.

Additional Details:

The H5TQ4G63AFR-PBR is internally organized into banks, allowing for concurrent memory access and improved efficiency. It incorporates features like auto refresh, self refresh, and power-down modes to optimize power management. For detailed specifications, including timing parameters, voltage ranges, and operating temperature ranges, refer to the Hynix Semiconductor datasheet for this specific part number. This DDR3 SDRAM chip is designed to deliver stable and reliable performance in demanding computing environments.

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