The 2SD667A is a silicon NPN epitaxial planar transistor manufactured by Hitachi. It's designed for use in various amplifier and switching applications. This transistor is known for its relatively high current gain and low saturation voltage, making it suitable for a wide array of electronic circuits.
Applications
- Audio amplifiers
- Switching circuits
- DC-DC converters
- Motor control circuits
- General-purpose amplification
Features
- NPN Silicon Epitaxial Planar Transistor
- High current gain (hFE)
- Low saturation voltage (VCE(sat))
- High collector-emitter voltage (VCEO) rating
- High collector current (IC) rating
- Available in a TO-92 package
Benefits
- Efficient amplification due to high current gain
- Low power dissipation in switching applications due to low saturation voltage
- Versatile use in various circuit designs
- Easy to mount and use due to the TO-92 package
- Reliable performance due to robust design
Additional Details
The 2SD667A features a high DC current gain (hFE), typically ranging from 100 to 300, allowing for efficient amplification of weak signals. The low saturation voltage (VCE(sat)) minimizes power dissipation in switching applications. It has a relatively high collector-emitter voltage (VCEO) rating, providing protection against voltage spikes. The maximum collector current (IC) rating is typically around 0.8A. The TO-92 package provides easy mounting and connection to the circuit board. It's important to consult the datasheet for the specific electrical characteristics and operating conditions. The complementary PNP transistor for this NPN transistor would be the 2SB647A.
