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Same model may have multiple batches, images only for reference.
HGTH12N40E1D
Same model may have multiple batches, images only for reference.

HGTH12N40E1D

Part No HGTH12N40E1D
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 12A, 400V, N-CHANNEL IGBT / IGBT 400 V 12 A 75 W Through Hole TO-218 Isolated
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 17.5 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 20V, 17.5A
Power - Max 75 W
Input Type Standard
Gate Charge 19 nC
Reverse Recovery Time (trr) 100 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-218-3 Isolated Tab, TO-218AC
Supplier Device Package TO-218 Isolated
Standard Package 109
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1349213-HGTH12N40E1D
Ultra Librarian 3D Model Ultra Librarian HGTH12N40E1D CAD Model

Description

The HGTH12N40E1D is a single IGBT transistor with a maximum power of 75 W. Harris Corporation manufactures it.

  • Transistor Type: Single IGBT
  • Maximum Power: 75 W
  • Collector-Emitter Breakdown Voltage: 400 V
  • Maximum Collector Current: 17.5 A
  • Reverse Recovery Time: 100 ns
  • Gate Charge: 19 nC
  • Input Type: Standard
  • Mounting Type: Through Hole
  • Package: TO-218-3 Isolated Tab, TO-218AC
  • Operating Temperature: -55°C to 150°C (TJ)
  • RoHS Status: Non-Compliant

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