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Same model may have multiple batches, images only for reference.
HGTG24N60D1D Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTG24N60D1D

Part No HGTG24N60D1D
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description UFS SERIES N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Power - Max 125 W
Input Type Standard
Gate Charge 155 nC
Reverse Recovery Time (trr) 60 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597680-HGTG24N60D1D
Ultra Librarian 3D Model Ultra Librarian HGTG24N60D1D CAD Model

Description

The 597680-HGTG24N60D1D is a single IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. Manufactured by Harris Corporation, this IGBT offers reliable performance and robust construction.

  • Package: Bulk
  • Standard Package: 1 piece
  • Maximum Power Rating: 125W
  • Reverse Recovery Time (trr): 60ns
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 40A
  • Vce(on) (Max): 2.3V @ Vge of 15V and Ic of 24A
  • Gate Charge: 155nC

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Quantity Unit Price Ext. Price
5+ $13.9559 $69.7795
11+ $11.4518 $125.9698
16+ $11.0938 $177.5008
22+ $10.7357 $236.1854
28+ $10.3777 $290.5756
38+ $9.3047 $353.5786
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Availability: 9,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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