The 597670-HGTG12N60D1D is a single IGBT (Insulated Gate Bipolar Transistor) designed for discrete semiconductor applications. It is part of the Harris Corporation's IGBTs series. This IGBT has a maximum power rating of 75W and a reverse recovery time of 60ns. It operates with a collector-emitter breakdown voltage of 600V and a maximum collector current of 21A. The Vce(on) is 2.5V @ a gate-emitter voltage of 15V and a collector current of 12A. The gate charge is 70nC and the IGBT is mounted using through-hole technology. The TO-247-3 package ensures easy installation and heat dissipation. The operating temperature range is -55°C to 150°C. With its high power handling capabilities and reliable performance, the 597670-HGTG12N60D1D is an active and efficient component in the field of discrete semiconductor applications.

• Maximum Power Rating: 75W
• Reverse Recovery Time: 60ns
• Collector-Emitter Breakdown Voltage: 600V
• Maximum Collector Current: 21A
• Vce(on): 2.5V @ a gate-emitter voltage of 15V and a collector current of 12A
• Gate Charge: 70nC
• Operating Temperature Range: -55°C to 150°C