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Same model may have multiple batches, images only for reference.
G3S12010B Real Image
Same model may have multiple batches, images only for reference.

G3S12010B

Part No G3S12010B
Manufacturer Global Power Technologies Group
Catalog Diodes, Rectifiers - Arrays
Description SIC SCHOTTKY DIODE 1200V 10A 3-P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr Global Power Technologies Group
Package Cut Tape (CT)Tape & Box (TB)
Product Status Active
Diode Configuration 1 Pair Common Cathode
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) (per Diode) 39A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Operating Temperature - Junction -55°C ~ 175°C
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Standard Package 30 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH info available upon request
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1220050-G3S12010B
Ultra Librarian 3D Model Ultra Librarian G3S12010B CAD Model

Description

The 1220050-G3S12010B is a diode array from Global Power Technologies Group.

  • Diode Type: SiC (Silicon Carbide) Schottky diode
  • Maximum DC Reverse Voltage: 1200V
  • Maximum Forward Voltage: 1.7V @ 5A
  • Recovery Time: None
  • Current: 39A (DC) per diode
  • Diode Configuration: 1 pair common cathode
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 175°C

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