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Same model may have multiple batches, images only for reference.
GD10MPS12E Real Image
Same model may have multiple batches, images only for reference.

GD10MPS12E

Part No GD10MPS12E
Manufacturer GeneSiC Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 29A TO252-2 / Diode 1200 V 29A Surface Mount TO-252-2
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr GeneSiC Semiconductor
Series SiC Schottky MPS™
Package Tape & Reel
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 29A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 5 µA @ 1200 V
Capacitance @ Vr, F 367pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package TO-252-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1341491-GD10MPS12E
Ultra Librarian 3D Model Ultra Librarian GD10MPS12E CAD Model

Description

The GD10MPS12E from GeneSiC Semiconductor is a SiC Schottky MPS™ diode with a maximum DC reverse voltage of 1200 V and an average rectified current of 29 A.

  • Diode Type: SiC Schottky MPS™
  • Maximum DC Reverse Voltage: 1200 V
  • Average Rectified Current: 29 A
  • Forward Voltage: 1.8 V @ 10 A
  • Reverse Leakage Current: 5 μA @ 1200 V
  • Application: Rectifier circuits and other high voltage applications
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature: -55°C to 175°C

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