The FMH21N60G-S33PPQ-P is a high-performance N-channel MOSFET manufactured by Fuji Electric, designed for efficient power switching. It incorporates advanced trench gate technology to minimize on-resistance and gate charge, leading to enhanced performance and reduced power losses.

Applications:

• Switch Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• DC-DC converters
• Motor control systems

Features:

• Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency.
• Fast Switching Speed: Minimizes switching losses and enhances overall performance.
• Low Gate Charge (Qg): Requires less drive power, simplifying drive circuitry.
• Avalanche Ruggedness: Withstands high avalanche energy, increasing reliability.
• RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits:

• High Efficiency: Reduces power consumption and heat dissipation.
• Improved System Performance: Enhances the overall performance of power electronic systems.
• Simplified Design: Low gate charge reduces the complexity of drive circuits.
• Increased Reliability: Robust design ensures long-term stable operation.
• Environmentally Friendly: Complies with RoHS standards.

Additional Details:

The FMH21N60G-S33PPQ-P has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 21A. The on-resistance (RDS(on)) is designed to be low to minimize power loss. It is packaged for efficient heat dissipation and reliable operation. The gate charge (Qg) is low, typically around 30nC. It operates within a temperature range of -55°C to +150°C.