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2SK1086

Part No 2SK1086
Manufacturer Fuji Electric
Catalog Hard To Find
Description N-CHANNEL SILICON POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fuji Electric
Win Source Part Number 1126931-2SK1086
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK1086 CAD Model

Description

The 2SK1086 is an N-channel power MOSFET manufactured by Fuji Electric. This device is designed for high-speed switching applications and is commonly used in power supplies, DC-DC converters, and motor control circuits. It offers low on-resistance and high avalanche ruggedness, making it a reliable choice for demanding applications.

Applications:

  • Switching regulators
  • DC-DC converters
  • Motor drivers
  • Power supplies
  • Uninterruptible power supplies (UPS)

Features:

  • N-Channel MOSFET
  • High Drain-Source Voltage (VDS)
  • Low On-Resistance (RDS(on))
  • High-Speed Switching
  • Avalanche Energy Rated
  • Isolated package available

Benefits:

  • Efficient Power Conversion: The low on-resistance minimizes power loss and heat generation, improving overall efficiency.
  • High Reliability: The avalanche energy rating ensures robust performance and protects against voltage spikes.
  • Fast Switching Speeds: Enables efficient operation in high-frequency switching applications.
  • Simplified Circuit Design: The N-channel configuration simplifies circuit implementation.
  • Improved Thermal Performance: The isolated package (if available) allows for direct mounting to heatsinks, enhancing thermal management.

Additional Details:

The 2SK1086 is typically available in a TO-220 or similar package. The datasheet specifies important parameters such as gate threshold voltage, input capacitance, and thermal resistance. Proper heatsinking is essential to maintain reliable operation at high currents. The gate-source voltage (VGS) must be controlled within its specified limits to prevent damage to the device. The low gate charge contributes to faster switching speeds and reduced switching losses. The device is suitable for use in a wide range of power management and control circuits. It's design characteristics make it a reliable choice for improving performance in power-intensive applications. It offers fast reverse recovery time (trr).

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