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MW7IC2725GNR1

Part No MW7IC2725GNR1
Manufacturer Freescale Semiconductor - NXP
Catalog RF Amplifiers
Description RF LDMOS Wideband Integrated Power Amplifiers
Sample
Rohs State rohs
ECAD Module
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Manufacturer Freescale Semiconductor - NXP
Win Source Part Number 1228728-MW7IC2725GNR1
Manufacturer Homepage www.freescale.com
Family Name MW7IC2725GN
Introduction Date March 08, 2008
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MW7IC2725GNR1 CAD Model

Description

The Freescale (now NXP) MW7IC2725GNR1 is a 25-Watt, 2.7 GHz RF power LDMOS transistor designed for high-performance amplifier applications. This device is engineered to deliver high gain and efficiency while operating in a wide range of frequencies, primarily targeting industrial, scientific, and medical (ISM) band applications. Its robust design ensures reliable operation in demanding environments.

Applications

  • Industrial heating and welding
  • Medical RF energy delivery
  • Scientific research equipment
  • RF lighting
  • MRI systems
  • Particle accelerators
  • RF generators

Features

  • High output power: 25 Watts
  • Frequency range: Up to 2.7 GHz
  • High gain: Typically 16 dB at 2.7 GHz
  • High efficiency: Up to 60%
  • 28 V operation
  • Integrated ESD protection
  • Thermally enhanced package

Benefits

  • Efficient RF energy generation
  • Reduced system cooling requirements due to high efficiency
  • Simplified amplifier design due to high gain
  • Improved system reliability due to robust LDMOS technology
  • Enhanced protection against electrostatic discharge
  • Effective heat dissipation for extended device lifespan
  • Compact design for space-constrained applications

Additional Details

The MW7IC2725GNR1 LDMOS transistor is designed to provide optimal performance in RF power amplifier applications. Its high gain simplifies the amplifier design process, reducing the number of stages required to achieve the desired output power. The high efficiency minimizes power consumption and reduces the need for extensive cooling, leading to cost savings and improved system reliability. The integrated ESD protection enhances the device's robustness and reduces the risk of damage during handling and operation. The thermally enhanced package ensures efficient heat dissipation, which is critical for maintaining device performance and extending its lifespan. This transistor is suitable for both pulsed and continuous wave (CW) operation. Proper impedance matching is essential for achieving optimal performance and preventing device damage. It is typically mounted on a heatsink to effectively dissipate heat. Careful attention should be paid to the gate bias voltage to ensure proper operation and prevent overdriving the device.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.0401 $84.0401
2+ $68.9558 $137.9116
3+ $66.8006 $200.4018
4+ $64.6465 $258.5860
5+ $62.4913 $312.4565
7+ $56.0267 $392.1869
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
Order Increment : 1 pcs
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