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HGTP10N120BN

Part No HGTP10N120BN
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 35A 298W TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 35A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 10A
Maximum Power Dissipation 298W
Total Switching Energy(Ets) 320μJ (on), 800μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 23ns/165ns
Testing Conditions 960V, 10A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 1043308-HGTP10N120BN
Family Name HGTP10N120BN
Introduction Date January 08, 2002
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian HGTP10N120BN CAD Model

Description

The HGTP10N120BN is a high popularity NPT IGBT transistor manufactured by Fairchild/ON Semiconductor. Fairchild/ON Semiconductor

  • Win Source Part Number: 1043308-HGTP10N120BN
  • Case/Package: TO-220AB
  • Maximum Current Collector: 35A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 298W
  • Total Switching Energy (on): 320μJ
  • Total Switching Energy (off): 800μJ
  • Suitability: Suitable for use in a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.1692 $50.1844
17+ $5.8824 $100.0008
27+ $5.6986 $153.8622
37+ $5.5147 $204.0439
47+ $5.3309 $250.5523
63+ $4.7794 $301.1022
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Availability: 3,500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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