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Same model may have multiple batches, images only for reference.
HGTD3N60C3S Real Image
Same model may have multiple batches, images only for reference.

HGTD3N60C3S

Part No HGTD3N60C3S
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 6A 33W TO252AA
Datasheet
HGTD3N60C3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 6A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2V @ 15V, 3A
Maximum Power Dissipation 33W
Total Switching Energy(Ets) 85μJ (on), 245μJ (off)
Input Type Standard
Gate Charge 10.8nC
Testing Conditions 480V, 3A, 82 Ohm, 15V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Win Source Part Number 204793-HGTD3N60C3S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGTD3N60C3S CAD Model

Description

The HGTD3N60C3S is a single IGBT semiconductor product from Fairchild/ON Semiconductor. This product is obsolete (EOL) and has a balanced supply and demand status in the market. It has a collector-emitter breakdown voltage of 600V and a maximum current collector of 6A. The HGTD3N60C3S has a total switching energy of 85μJ (on) and 245μJ (off) and a gate charge of 10.8nC. This product has a medium popularity and is packaged in a reel-TR case with SMD (SMT) mounting.

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