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HGT1S20N36G3VLS

Part No HGT1S20N36G3VLS
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT, 37.7A, 355V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 415 V
Current - Collector (Ic) (Max) 37.7 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 5V, 20A
Power - Max 150 W
Input Type Logic
Gate Charge 28.7 nC
Td (on/off) @ 25°C -/15µs
Test Condition 300V, 10A, 25Ohm, 5V
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 145262-HGT1S20N36G3VLS
Ultra Librarian 3D Model Ultra Librarian HGT1S20N36G3VLS CAD Model

Description

The 145262-HGT1S20N36G3VLS is a single IGBT transistor designed for use in discrete semiconductor products. With a maximum power rating of 150 W, this transistor is capable of handling high power applications. The voltage breakdown between the collector and emitter is 415 V, and the maximum collector current is 37.7 A. The transistor has a low on-state voltage of 1.9V at a gate voltage of 5V and a collector current of 20A. It features logic level input and has a gate charge of 28.7 nC. The transistor is surface mountable and comes in a TO-263-3 package. It has an operating temperature range of -40°C to 175°C. This product is supplied by Fairchild/ON Semiconductor and is currently active in the market.

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