The FGL35N120FTD is a 1200V Field Stop IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. IGBTs combine the characteristics of MOSFETs and bipolar junction transistors, offering high input impedance and low on-state voltage drop. This particular IGBT is designed for high-speed switching applications, providing efficient and reliable performance in a variety of power electronics systems.

Applications

• Uninterruptible Power Supplies (UPS): Used in UPS systems to provide backup power during power outages.
• Induction Heating: Employed in induction heating systems for efficient and precise heating of materials.
• Welding Equipment: Integrated into welding machines for controlling the welding current.
• Power Factor Correction (PFC): Used in PFC circuits to improve power factor and reduce harmonic distortion.
• Solar Inverters: Integrated into solar inverters to convert DC power from solar panels to AC power for grid connection.

Features

• High Voltage Capability: Rated for 1200V, suitable for high-voltage applications.
• Low On-State Voltage Drop: Minimizes power dissipation and improves efficiency.
• Fast Switching Speed: Enables high-frequency switching operation, reducing switching losses.
• Field Stop Technology: Enhances switching performance and reduces tail current.
• Overcurrent Protection: Provides built-in overcurrent protection for enhanced reliability.

Benefits

• High Efficiency: Low on-state voltage drop and fast switching speed result in high efficiency.
• Improved Reliability: Built-in overcurrent protection enhances system reliability.
• Reduced Switching Losses: Fast switching speed minimizes switching losses, improving overall system performance.
• Simplified System Design: Integrated features simplify system design and reduce component count.
• Robust Performance: Designed for robust performance in demanding applications.

Additional Details

The FGL35N120FTD IGBT features a field stop trench design, which optimizes the trade-off between on-state voltage drop and switching speed. It is designed to operate at high switching frequencies, making it suitable for modern power electronics applications. The IGBT is available in a TO-247 package. This package provides excellent thermal performance, allowing the device to dissipate heat efficiently. ON Semiconductor provides detailed datasheets and application notes for its IGBTs, facilitating system design and optimization. The FGL35N120FTD is designed for applications requiring high efficiency and reliability.