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FGH80N60FDTU

Part No FGH80N60FDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 290W
Total Switching Energy(Ets) 1mJ (on), 520μJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 21ns/126ns
Testing Conditions 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr) 36ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 204183-FGH80N60FDTU
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 450
Family Name FGH80N60FD
Introduction Date December 02, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian FGH80N60FDTU CAD Model

Description

The Fairchild/ON Semiconductor IGBT type Field Stop is a high-power, high-voltage transistor designed for use in a variety of applications. With a maximum collector-emitter breakdown voltage of 600V and a maximum current collector of 80A, this transistor is ideal for use in power supplies, motor control, and other high-power applications.

  • The transistor is packaged in a TO-247 case and can operate in temperatures ranging from -55°C to 150°C (TJ).
  • Gate charge: 120nC
  • Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
  • Total switching energy(Ets): 1mJ (on), 520μJ (off)
  • Turn-on and turn-off delay time: 21ns/126ns
  • The transistor is currently in active status with limited supply and demand and has a high popularity.
  • Quantity per package: 450

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