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Same model may have multiple batches, images only for reference.
FGD3N60UNDF Real Image
Same model may have multiple batches, images only for reference.

FGD3N60UNDF

Part No FGD3N60UNDF
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 6A 60W DPAK
Datasheet
FGD3N60UNDF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 6A
Pulsed Collector Current 9A
Collector-emitter saturation voltage(Max) 2.52V @ 15V, 3A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 52μJ (on), 30μJ (off)
Input Type Standard
Gate Charge 1.6nC
Turn-on and Turn-off delay time 5.5ns/22ns
Testing Conditions 400V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 21ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Win Source Part Number 1038655-FGD3N60UNDF
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FGD3N60UNDF CAD Model

Description

The Fairchild/ON Semiconductor FGD3N60UNDF is an IGBT (Insulated Gate Bipolar Transistor) discrete semiconductor product.

  • Supply and Demand Status: Sufficient
  • Package: TO-252 (D-Pak)
  • IGBT Type: NPT
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 60W

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8881 $62.1670
160+ $0.7287 $116.5920
250+ $0.7059 $176.4750
340+ $0.6832 $232.2880
440+ $0.6604 $290.5760
590+ $0.5921 $349.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,970 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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