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Same model may have multiple batches, images only for reference.
FGA90N30DTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGA90N30DTU

Part No FGA90N30DTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT, 90A, 300V, N-CHANNEL / IGBT 300 V 90 A 219 W Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Fairchild Semiconductor
Package Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 220 A
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 20A
Power - Max 219 W
Input Type Standard
Gate Charge 87 nC
Reverse Recovery Time (trr) 21 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3P
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-FGA90N30DTU-FS,FAIFSCFGA90N30DTU
Standard Package 30
Win Source Part Number 1030445-FGA90N30DTU
Ultra Librarian 3D Model Ultra Librarian FGA90N30DTU CAD Model

Description

The Fairchild Semiconductor FGA90N30DTU is an IGBT transistor designed for use in high-power applications.

  • Collector-Emitter Breakdown Voltage: 300V
  • Maximum Collector Current: 90A
  • Reverse Recovery Time: 21ns
  • Gate Charge: 87nC
  • Package: TO-3P
  • Packaging: Tube
  • Power Rating: 219W
  • Operating Temperature: -55°C to 150°C
  • Product Status: Obsolete
  • Alternative Parts: FGA180N30DTU, FGA90N33ATDTU, FGPF30N30, STGP100N30, IRG6B330UDPBF, and IRG6I320UPBF
  • ECCN: EAR99

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