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Same model may have multiple batches, images only for reference.
FGA5065ADF Real Image
Same model may have multiple batches, images only for reference.

FGA5065ADF

Part No FGA5065ADF
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTO / IGBT Trench Field Stop 650 V 100 A 268 W Through Hole TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Fairchild Semiconductor
Package Bulk
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
Power - Max 268 W
Switching Energy 1.35mJ (on), 309µJ (off)
Input Type Standard
Gate Charge 72.2 nC
Td (on/off) @ 25°C 20.8ns/62.4ns
Test Condition 400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr) 31.8 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
ECCN EAR99
HTSUS 8542.39.0001
Other Names ONSFSCFGA5065ADF,2156-FGA5065ADF
Standard Package 1
Win Source Part Number 1187678-FGA5065ADF
Ultra Librarian 3D Model Ultra Librarian FGA5065ADF CAD Model

Description

The Fairchild Semiconductor FGA5065ADF is a trench field stop IGBT type electronic component with a maximum power of 268 W.

  • Type: Trench Field Stop IGBT
  • Maximum Power: 268 W
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Switching Energy (On): 1.35mJ
  • Switching Energy (Off): 309μJ
  • Gate Charge: 72.2 nC
  • Test Condition: 400V, 50A, 6Ohm, 15V
  • Mounting Type: Through Hole
  • Package: TO-3P-3, SC-65-3
  • Temperature Range - Operating: -55°C ~ 175°C (TJ)
  • ECCN: EAR99

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