The FDSS517D is a Dual N-Channel Shielded Gate PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It is optimized for high-efficiency synchronous rectification in DC-DC converters and other power management applications.

Applications

• Synchronous Rectification in DC-DC Converters
• Point-of-Load (POL) Converters
• Power Management in Computing and Server Systems
• High-Frequency Switching Applications

Features

• Shielded Gate Technology: Reduces gate charge and improves switching performance.
• Low RDS(on): Minimizes conduction losses for higher efficiency.
• Fast Switching Speed: Reduces switching losses.
• Low Gate Charge: Lowers gate drive requirements.
• Avalanche Rated: Ensures robustness under transient conditions.
• RoHS Compliant: Meets environmental standards.

Benefits

• High Efficiency: Shielded gate technology and low RDS(on) minimize power losses.
• Improved Thermal Performance: Reduced power dissipation leads to lower operating temperatures.
• Simplified Design: Requires less gate drive power.
• Enhanced Reliability: Avalanche rating provides increased robustness.

Additional Details

The FDSS517D features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 13A per channel. It is available in a Power 5x6 package. The shielded gate technology reduces gate charge, resulting in faster switching speeds and lower switching losses. The low on-resistance minimizes power loss during operation. The avalanche rating provides an added layer of protection against voltage spikes and surges. This Dual N-Channel MOSFET is well-suited for synchronous rectification in DC-DC converters, point-of-load converters, and other high-frequency switching applications. Its high efficiency and robust design make it an excellent choice for demanding power management applications.