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FDS79ZN3

Part No FDS79ZN3
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1058957-FDS79ZN3
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS79ZN3 CAD Model

Description

The FDS79ZN3 is a PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed to deliver high efficiency and power density in synchronous buck converters and other power management applications. Its key features include low on-resistance and fast switching capabilities.

Applications:

  • Synchronous Buck Converters
  • DC-DC Conversion
  • Power Management in Notebook Computers
  • Point-of-Load (POL) Converters

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, maximizing efficiency.
  • Fast Switching Speed: Reduces switching losses for improved performance at higher frequencies.
  • High Power and Current Handling Capability: Suitable for demanding power applications.
  • Integrated Schottky Diode: Reduces switching losses and improves efficiency.

Benefits:

  • High Efficiency: Low RDS(on) and fast switching minimize power losses, increasing overall system efficiency.
  • Increased Power Density: Allows for smaller and more compact power supply designs.
  • Improved Thermal Performance: Reduces heat generation, enhancing reliability.
  • Simplified Design: Integrated Schottky diode simplifies the circuit design and reduces component count.

Additional Details:

The FDS79ZN3 is available in a Power 56 package. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), pulsed drain current (IDM), and on-resistance (RDS(on)) at various gate-source voltage levels. Consult the datasheet for detailed electrical characteristics, thermal performance data, and application guidelines. It's crucial to ensure proper thermal management for reliable operation, especially at high power levels. The device's low gate charge (Qg) also contributes to its fast switching speeds and reduced gate drive requirements.

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