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FDS6672S

Part No FDS6672S
Manufacturer Fairchild/ON Semiconductor
Catalog Miscellaneous
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Fairchild/ON Semiconductor
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 823266-FDS6672S
Ultra Librarian 3D Model Ultra Librarian FDS6672S CAD Model

Description

The FDS6672S is a PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). This device is designed for high-efficiency switching applications, especially in battery-powered systems and portable devices. It is optimized for load switching and power management circuits requiring low on-resistance and fast switching speeds. The FDS6672S is available in a surface-mount package, making it suitable for space-constrained applications where minimizing the PCB footprint is essential.

Applications:

  • Load switching in portable devices.
  • Power management in battery-powered systems.
  • DC-DC converters.
  • Battery protection circuits.
  • High-side load switch.

Features:

  • Low on-resistance (RDS(on)) to minimize conduction losses.
  • Fast switching speed for high-frequency operation.
  • Low gate charge (Qg) for efficient driving.
  • Small surface-mount package.
  • RoHS compliant.
  • Logic level gate drive

Benefits:

  • Increased power conversion efficiency due to reduced conduction and switching losses.
  • Improved thermal performance.
  • Reduced component count and board space.
  • Enhanced system reliability.
  • Simplified design and layout.

Additional Details:

The FDS6672S typically features a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating that varies depending on the operating temperature and mounting conditions. The RDS(on) is very low. The device is packaged in a SO-8 package. The gate threshold voltage (VGS(th)) is specified to ensure proper turn-on and turn-off characteristics when driven from a logic-level source. The device's thermal resistance characteristics are also important for thermal management in power applications. This MOSFET offers designers a combination of low on-resistance, fast switching, and efficient thermal performance within a small footprint. Its design is tailored to improve power density and efficiency in a variety of modern electronic systems.

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