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FDC6036PNL

Part No FDC6036PNL
Manufacturer Fairchild/ON Semiconductor
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1058745-FDC6036PNL
Categories OEM Parts(F-I)
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDC6036PNL CAD Model

Description

The FDC6036PNL is a P-Channel PowerTrench® MOSFET from Fairchild Semiconductor, now ON Semiconductor, designed for load switching and power management in low-voltage applications. Featuring low on-resistance (RDS(on)) and optimized gate charge, this MOSFET provides efficient and reliable performance in portable devices, battery-powered systems, and other space-constrained applications.

Applications:

  • Load Switching: Efficiently controls power to various loads in electronic devices.
  • Power Management: Optimizes power distribution and voltage regulation in portable systems.
  • Battery-Powered Devices: Extends battery life in smartphones, tablets, and other portable electronics.
  • DC-DC Conversion: Provides efficient voltage conversion in DC-DC converters.
  • High-Side Load Switch: Suitable for high-side load switch applications with logic-level control.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses, improving overall efficiency.
  • Fast Switching Speed: Reduces switching losses, enabling higher operating frequencies.
  • PowerTrench® Technology: Optimizes performance and efficiency in switching applications.
  • Logic Level Gate Drive: Allows direct drive from logic circuits, simplifying design.
  • Small Footprint: Compact package ideal for space-constrained applications.

Benefits:

  • Increased Efficiency: Low RDS(on) and optimized gate charge reduce power losses, improving efficiency.
  • Extended Battery Life: Minimizes energy consumption in portable devices, extending battery life.
  • Simplified Design: Logic-level gate drive simplifies gate drive circuitry, reducing component count.
  • Compact Solution: Small footprint allows for high-density designs and integration in space-constrained applications.
  • Enhanced Thermal Performance: Efficient heat dissipation ensures reliable operation.

Technical Specifications: The FDC6036PNL typically has a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) rating of approximately -3.3A, and a gate-source voltage (VGS) rating of ±20V. It is commonly available in a MicroFET 2x2 package. This P-Channel MOSFET is an ideal choice for low-voltage, high-efficiency load switching and power management in portable applications.

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