The FDBL86061F085 is an N-Channel PowerTrench® MOSFET from Fairchild/ON Semiconductor, designed for high-efficiency switching applications. It features a low on-resistance and gate charge, contributing to reduced power losses and improved performance. The integration of these features makes it suitable for various applications requiring efficient power management.

Applications

• Synchronous Rectification in AC/DC and DC/DC converters
• Motor Control
• Battery Management Systems
• Load Switching
• Power Supplies

Features

• Low on-resistance: RDS(on) = 2.7 mΩ (Typ.) @ VGS = 10V, ID = 80A
• High current capability: ID = 150A
• Low gate charge: Qg = 63nC (Typ.) @ VGS = 10V
• Avalanche energy rated
• 100% UIS Tested
• RoHS Compliant

Benefits

• High Efficiency: The low RDS(on) minimizes conduction losses, leading to greater overall efficiency in power conversion applications.
• Reduced Switching Losses: Low gate charge results in faster switching speeds and reduced switching losses.
• Enhanced Thermal Performance: Capable of handling high currents while maintaining low temperatures.
• High Reliability: Robust design and manufacturing processes ensure long-term reliability.
• Optimized for High-Frequency Applications: The device characteristics are tailored for efficient operation at higher switching frequencies.

Additional Details

The FDBL86061F085 is housed in a Power33 package. This package enhances thermal performance and enables efficient heat dissipation. This MOSFET is characterized by its avalanche capability and robustness, making it suitable for demanding applications. Its drain-source voltage is rated at 60V. Continuous drain current at VGS=10V is 150A, and pulsed drain current is even higher. This MOSFET is commonly used in high-power DC-DC converters and motor control circuits where efficiency and reliability are critical. The specific dimensions and other detailed electrical characteristics are available in the device's datasheet.