The EDJ2104BCSE-GN-F is a DDR (Double Data Rate) SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by Elpida Memory. DDR SDRAM achieves higher data transfer rates than its predecessor, SDR SDRAM, by transferring data on both the rising and falling edges of the system clock signal. This effectively doubles the data throughput, leading to improved memory bandwidth and overall system performance.

Applications

• Desktop PCs
• Laptop PCs
• Servers
• Graphics cards
• Embedded systems

Features

• Double Data Rate (DDR) architecture
• High-speed data transfer capabilities
• Low voltage operation (exact voltage depends on the DDR generation)
• Synchronous operation with the system clock
• Compliant with JEDEC standards

Benefits

• Increased memory bandwidth leading to improvements in system performance
• Reduced power consumption when compared to older memory technologies
• Improved responsiveness in demanding application scenarios
• Consistent and reliable data storage and retrieval

Additional Details

The '-GN-F' suffix provides information regarding the speed grade, precise timing characteristics, and the operating temperature range of the memory module. The '2104' designation likely suggests a density, potentially 128MB or 256MB. Essential technical specifications include clock frequency, CAS latency (CL), and other specific timing parameters. Because Elpida Memory was acquired by Micron Technology, relevant datasheets can be located under either manufacturer's name. It's important to determine the DDR generation (DDR, DDR2, or DDR3) because this parameter will influence the operating voltage and performance specifications of the memory.