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EBJ40UG8EFU0-GN-F

Part No EBJ40UG8EFU0-GN-F
Manufacturer Elpida Memory
Catalog Memory - Modules
Description DDR3-1600 512Mx64 SODIMM (4GB)
Sample
Rohs State rohs
ECAD Module
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Categories Memory - Modules
Win Source Part Number 947441-EBJ40UG8EFU0-GN-F
Series *
Ultra Librarian 3D Model Ultra Librarian EBJ40UG8EFU0-GN-F CAD Model

Description

The EBJ40UG8EFU0-GN-F is a DDR3 SDRAM memory chip manufactured by Elpida Memory. This component is designed for applications requiring high-speed data access and low power consumption, such as desktop computers, laptops, and embedded systems. DDR3 SDRAM offers significant improvements over previous generations of memory technology, including faster clock speeds, lower voltage requirements, and increased bandwidth. The EBJ40UG8EFU0-GN-F incorporates advanced features to enhance performance and reliability.

Applications

  • Desktop Computers
  • Laptop Computers
  • Servers
  • Embedded Systems
  • Gaming Consoles

Features

  • DDR3 SDRAM Technology: Provides high-speed data transfer rates and low power consumption.
  • Double Data Rate Architecture: Transfers data on both the rising and falling edges of the clock signal.
  • On-Die Termination (ODT): Improves signal integrity by reducing signal reflections.
  • Low Voltage Operation: Reduces power consumption and heat generation.
  • Lead-Free Construction: Complies with environmental standards.
  • High Bandwidth: Supports high data transfer rates for demanding applications.
  • Advanced Power Management: Optimizes power consumption for energy efficiency.

Benefits

  • Increased System Performance: High-speed memory improves application responsiveness and reduces latency.
  • Improved Signal Integrity: ODT ensures stable data transfer and minimizes errors.
  • Reduced Power Consumption: Low voltage operation extends battery life in portable devices.
  • Enhanced System Reliability: Robust design ensures stable and error-free operation.
  • Compatibility with DDR3 Platforms: Seamless integration with existing systems.

Additional Details

The EBJ40UG8EFU0-GN-F operates at a voltage of 1.5V, resulting in reduced power consumption compared to DDR2 SDRAM. The on-die termination feature improves signal integrity, allowing for higher clock speeds and more reliable operation. The high bandwidth supports data transfer rates up to 1600 MT/s (Mega Transfers per second). The chip's lead-free construction complies with environmental standards. The advanced power management features optimize power consumption, making it suitable for various applications. This DDR3 SDRAM chip is a reliable and high-performance memory solution designed to meet the demands of modern computing systems.

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