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ZRT040N8A1TC

Part No ZRT040N8A1TC
Manufacturer Diodes Incorporated
Catalog PMIC - Voltage Reference
Description Voltage References -
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-92
Maximum Operating Temperature 125 °C
Min Operating Temperature -55 °C
Output Voltage 4.01 V
RoHS Non-Compliant
Win Source Part Number 987382-ZRT040N8A1TC
Categories PMIC - Voltage Reference
Manufacturer Diodes Incorporated
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian ZRT040N8A1TC CAD Model

Description

Introducing the ZRT040N8A1TC – A Robust N-Channel MOSFET by Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the ZRT040N8A1TC, a high-performance N-Channel MOSFET that is designed to cater to a wide range of power management applications. This device is a testament to Diodes Incorporated's commitment to providing innovative solutions that enhance energy efficiency and reliability.

Key Features of the ZRT040N8A1TC

  • High Power Efficiency: The ZRT040N8A1TC boasts low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency in applications.
  • Advanced Technology: Utilizing the latest trench MOSFET technology, this component offers superior switching performance and robustness, making it suitable for demanding environments.
  • Compact Design: Housed in a compact TO-252 (DPAK) package, the ZRT040N8A1TC is optimized for space-constrained applications without compromising on power handling capabilities.
  • High Thermal Performance: With an excellent thermal profile, this MOSFET can operate effectively under high-temperature conditions, ensuring reliability and longevity.

Applications

The versatility of the ZRT040N8A1TC allows it to be integrated into a vast array of applications. It is particularly suited for:

  • DC/DC converters
  • Power supply circuits
  • Motor drives
  • Automotive applications
  • Load switches
  • Power management in portable devices

Technical Specifications

With a drain-source voltage (V<sub>DS) of 40V and a continuous drain current (I<sub>D) of 8A, the ZRT040N8A1TC is capable of handling significant power levels. Its threshold voltage (V<sub>GS(th)) is optimized for low-voltage drive systems, enhancing its suitability for battery-operated devices.

Quality and Support

Diodes Incorporated ensures that all its products meet the highest quality standards, and the ZRT040N8A1TC is no exception. Customers can rely on comprehensive technical support and resources, including datasheets, application notes, and design tools, to facilitate seamless integration into their projects.

For designers seeking a robust, efficient, and reliable N-Channel MOSFET, the ZRT040N8A1TC from Diodes Incorporated is an excellent choice that promises to deliver top-notch performance in a variety of power management scenarios.

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