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S1B-13-G

Part No S1B-13-G
Manufacturer Diodes Incorporated
Catalog Diodes, Rectifiers - Single
Description DIODE GENERAL PURPOSE SMA / Diode
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number 304622-S1B-13-G
HTSUS 8541.10.0080
ECCN EAR99
REACH Status REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Standard Package 5,000 pcs
Product Status Obsolete
Package Tape & Reel
Series *
Mfr Diodes Incorporated
Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Ultra Librarian 3D Model Ultra Librarian S1B-13-G CAD Model

Description

The S1B-13-G is a high-efficiency, surface-mount rectifier diode designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This rectifier diode is well-suited for a variety of applications that require reliable and efficient power conversion and management. Its design is optimized for low power loss and high efficiency, making it an ideal choice for use in compact electronic devices.

Key Features

  • High Current Capability: The S1B-13-G is capable of sustaining a high average forward rectified current of 1.0 A, making it suitable for handling moderate power requirements in electronic circuits.
  • Low Forward Voltage Drop: With a low forward voltage drop, this diode ensures minimal power loss during operation, which enhances the overall efficiency of the system it is integrated into.
  • High Surge Current Capability: Designed to withstand high surge currents, the S1B-13-G can tolerate momentary overloads, thus providing robust performance under stressful conditions.
  • Surface Mount Package: The S1B-13-G comes in a compact SMB package, which is ideal for automated assembly processes and helps in reducing the overall size of the electronic device.
  • Lead-Free and RoHS Compliant: This product is environmentally friendly, complying with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment.

Applications

The versatility of the S1B-13-G allows it to be used across a broad range of applications. It is particularly useful in:

  • Power supply units
  • Automotive systems
  • Consumer electronics
  • Lighting systems
  • Telecommunication devices

Technical Specifications

Parameter Value Average Forward Current (Io) 1.0 A Forward Voltage (Vf) 1.1 V (max) at 1.0 A Reverse Current (Ir) 5.0 µA (max) at 100 V Reverse Voltage (Vr) 100 V Operating Junction Temperature (Tj) -55°C to +150°C

With its robust construction and superior electrical characteristics, the S1B-13-G from Diodes Incorporated stands out as a reliable and efficient component for your power management needs. Its integration into your electronic designs will ensure a balance between performance and footprint, enhancing the value of your final product.

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