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DMG2305UXQ-7

Part No DMG2305UXQ-7
Manufacturer Diodes Incorporated
Catalog FETs - Single
Description MOSFET P-CH 20V 4.2A SOT23 / P-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 4.2A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 52mOhm at 4.2A, 4.5V
Vgs(th) (Maximum) at Id 900mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10.2nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 808pF at 15V
Power Dissipation (Maximum) 1.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-23
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802549-DMG2305UXQ-7
Ultra Librarian 3D Model Ultra Librarian DMG2305UXQ-7 CAD Model

Description

DMG2305UXQ-7 - High-Performance P-Channel MOSFET

The DMG2305UXQ-7 is a cutting-edge P-Channel enhancement mode MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is designed using advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, making it suitable for a wide range of power management applications.

With its ultra-small X3-DFN2020-6 (Type B) package, the DMG2305UXQ-7 offers a compact footprint, ensuring minimal space usage on the PCB, which is crucial for modern high-density applications. This feature, coupled with the product's low profile, makes it an ideal choice for portable and space-constrained electronics, such as smartphones, tablets, and wearable devices.

The DMG2305UXQ-7 is characterized by its high continuous drain current of -4.3A and low threshold voltage, which ensures efficient operation even at low gate voltages. The device also boasts a low RDS(ON) of just 65mΩ at VGS = -4.5V, which translates to reduced conduction losses and improved overall efficiency in application circuits.

Key specifications of the DMG2305UXQ-7 include:

  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -16A
  • Power Dissipation (PD): 1.25W
  • Static Drain-Source On-Resistance (RDS(ON)): 65mΩ at VGS = -4.5V
  • High Power and Current Handling Capability

Additionally, the DMG2305UXQ-7 is RoHS compliant and Halogen-free, reflecting Diodes Incorporated's commitment to environmental sustainability. The device's performance and power efficiency make it an excellent choice for load switch applications, power management tasks, and other circuits where a high-performance P-Channel MOSFET is required.

Whether you're designing power supplies, battery management systems, or looking to optimize the power efficiency of your next project, the DMG2305UXQ-7 from Diodes Incorporated is sure to meet your needs with its superior performance and space-saving package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1426 $50.6230
750+ $0.1336 $100.2000
1,165+ $0.1291 $150.4015
1,670+ $0.1200 $200.4000
2,165+ $0.1155 $250.0575
2,705+ $0.1110 $300.2550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 148,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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