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BFS17NTA

Part No BFS17NTA
Manufacturer Diodes Incorporated
Catalog RF Transistors (BJT)
Description TRANS RF NPN 3.2GHZ 11V SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 11V
Frequency - Transition 3.2GHz
Maximum Power Dissipation 330mW
Typical Gain (hFE) (Min) 56 @ 5mA, 10V
Maximum Current Collector 50mA
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 096712-BFS17NTA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFS17NTA CAD Model

Description

Introducing the BFS17NTA NPN High-Frequency Transistor from Diodes Incorporated

The BFS17NTA is a cutting-edge NPN bipolar junction transistor designed by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This high-frequency transistor is engineered to deliver exceptional performance in a wide range of applications, making it an ideal choice for designers looking to enhance their electronic circuits.

Key Features

  • High Transition Frequency (fT): The BFS17NTA boasts a high transition frequency, which makes it perfectly suited for applications in the VHF and UHF bands. This characteristic ensures that the device can handle high-speed signals efficiently, making it an excellent choice for RF amplification and mixing applications.
  • Low Noise Figure: With its low noise figure, the BFS17NTA is capable of amplifying signals without introducing significant noise, preserving signal integrity and making it ideal for sensitive RF and audio applications.
  • High Power Gain: The transistor provides a high power gain, which is essential for applications that require signal amplification to drive loads or for boosting signal strength in communication systems.
  • Robust Maximum Ratings: The BFS17NTA comes with robust maximum ratings, including collector-emitter voltage (VCEO), collector-base voltage (VCBO), emitter-base voltage (VEBO), and collector current (IC), ensuring reliable operation under various conditions.

Applications

The BFS17NTA is versatile and can be used in a multitude of applications, such as:

  • RF amplifiers and oscillators
  • IF amplifiers in TV and radio receivers
  • High-frequency signal processing
  • Mixers and modulators
  • Commercial and consumer communication devices

Package and Quality Assurance

The BFS17NTA comes in a SOT-23 package, which is not only compact but also offers excellent power dissipation for its size. This package is widely used and well-suited for automated assembly processes, making it a convenient choice for mass production. Diodes Incorporated is committed to quality, and the BFS17NTA is produced under stringent quality control standards to ensure reliability and performance consistency.

In conclusion, the BFS17NTA NPN high-frequency transistor from Diodes Incorporated is a high-performance component that offers a balance of speed, power gain, and low noise operation, making it an excellent choice for advanced electronic designs in the RF domain.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2933 $51.3275
420+ $0.2407 $101.0940
645+ $0.2331 $150.3495
890+ $0.2256 $200.7840
1,150+ $0.2181 $250.8150
1,535+ $0.1955 $300.0925
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Availability: 2,177 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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