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BCM846BS-7

Part No BCM846BS-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description GENERAL PURPOSE TRANSISTOR SOT36 / Bipolar (BJT) Transistor Array 2 NPN (Dual) Matched Pair 65V 100mA 100MHz 200mW Surface Mount SOT-363
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Transistor Type 2 NPN (Dual) Matched Pair
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200mW
Frequency - Transition 100MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Base Product Number BCM846
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names BCM846BS-7DI
Standard Package 3,000
Win Source Part Number 959500-BCM846BS-7
Ultra Librarian 3D Model Ultra Librarian BCM846BS-7 CAD Model

Description

BCM846BS-7 Dual NPN & PNP Bipolar Transistor from Diodes Incorporated

The BCM846BS-7 is a versatile and high-performance dual bipolar transistor manufactured by Diodes Incorporated, designed to cater to a wide range of applications that require both NPN and PNP transistors. This product is a testament to Diodes Incorporated's commitment to providing innovative solutions that enhance the efficiency and functionality of electronic circuits.

The BCM846BS-7 features two transistors in one compact SOT-363 package, which not only saves valuable board space but also simplifies the design and assembly process. The integration of both NPN and PNP transistors into a single component allows for the creation of complementary or push-pull configurations, which are essential in various amplification and switching applications.

Key Specifications:

  • Transistor Type: NPN and PNP
  • DC Current Gain (hFE): 160 to 400 at 10mA, VCE = 5V
  • Collector-Emitter Voltage (VCEO): 65V
  • Collector-Base Voltage (VCBO): 80V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current - Continuous (IC): 100mA
  • Power Dissipation (PD): 200mW
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

With its high collector-emitter voltage and collector-base voltage, the BCM846BS-7 is capable of handling moderate voltage applications while maintaining stability and reliability. The device's current gain ensures efficient current amplification, making it suitable for low to medium current requirements.

Its power dissipation rating of 200mW indicates the BCM846BS-7's ability to handle a reasonable amount of power without compromising performance. Additionally, the broad operating and storage temperature range guarantees that the transistor will perform consistently across various environmental conditions.

The BCM846BS-7 is ideal for use in signal processing, power management, and control systems. It is also commonly employed in consumer electronics, automotive circuits, and telecommunication devices. Its small form factor and dual transistor functionality make it a valuable component for designers looking to optimize their circuit designs for space and performance.

Overall, the BCM846BS-7 from Diodes Incorporated represents a reliable and efficient solution for designers who require both NPN and PNP transistors in a single package, ensuring high performance while minimizing footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.1747 $50.6630
700+ $0.1433 $100.3100
1,080+ $0.1389 $150.0120
1,490+ $0.1344 $200.2560
1,925+ $0.1299 $250.0575
2,580+ $0.1165 $300.5700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 54,240 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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