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BC856A-7-F

Part No BC856A-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Transistor Type PNP
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 65V
Vce Saturation (Maximum) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Maximum) 15nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 125 @ 2mA, 5V
Power - Max 300mW
Frequency - Transition 200MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package SOT-23-3
Win Source Part Number 1152117-BC856A-7-F
Manufacturer Homepage www.diodes.com
Family Name BC856A
Introduction Date March 23, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC856A-7-F CAD Model

Description

The BC856A-7-F from Diodes Incorporated is a high-quality PNP Bipolar Junction Transistor (BJT) that offers excellent amplification and switching characteristics. This semiconductor device is designed for general-purpose and low-power applications, making it a versatile component in various electronic circuits.

Key Features

  • Transistor Type: PNP - This transistor type is characterized by a negative-positive-negative configuration, which makes it suitable for use in the amplification of signals in electronic devices.
  • Configuration: Single - The BC856A-7-F is a standalone transistor, which allows for flexibility in circuit designs and can be used in multiple configurations depending on the application requirements.
  • Power Dissipation (Pd): 250mW - The device can dissipate a moderate amount of power, making it suitable for low-power applications without compromising performance.
  • DC Current Gain (hFE): 125 to 475 - This range of current gain ensures that the transistor can amplify the input signal effectively, making it a reliable choice for amplification purposes.
  • Collector-Emitter Voltage (Vceo): 65V - With a high breakdown voltage, the BC856A-7-F can handle significant voltage levels across the collector-emitter junction, which is beneficial for various electronic applications.
  • DC Collector Current (Ic): 100mA - The transistor can control a collector current up to 100mA, which is sufficient for many low-power circuits.
  • Operating and Storage Junction Temperature Range: -55°C to +150°C - This wide temperature range ensures reliable operation under various environmental conditions.

Applications

The BC856A-7-F is suitable for a broad range of applications, including but not limited to:

  • Signal Amplification
  • Switching Applications
  • Audio Amplifiers
  • Driver Stages in Hi-Fi Amplifiers and Television Circuits
  • Linear Amplification and Switching

Package and Quality

This transistor comes in a SOT-23 package, which is a small and efficient surface-mount package that is widely used in the industry for its compact size and ease of integration into PCB designs. Diodes Incorporated ensures that each BC856A-7-F transistor meets stringent quality standards, providing reliability and performance that engineers and designers can trust for their electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
900+ $0.0558 $50.2200
2,185+ $0.0458 $100.0730
3,380+ $0.0444 $150.0720
4,655+ $0.0430 $200.1650
6,025+ $0.0415 $250.0375
8,065+ $0.0372 $300.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,000 pieces
MOQ: 900 pcs
Order Increment : 1 pcs
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