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Same model may have multiple batches, images only for reference.
S34MS04G200BHI003 Real Image
Same model may have multiple batches, images only for reference.

S34MS04G200BHI003

Part No S34MS04G200BHI003
Manufacturer Cypress Semiconductor Corp
Catalog Memory
Description IC FLASH 4GBIT PARALLEL 63BGA
Datasheet
S34MS04G200BHI003 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Cypress Semiconductor Corp
Series MS-2
Package Tape & Reel
Product Status Discontinued
Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45 ns
Voltage - Supply 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-BGA (11x9)
Base Product Number S34MS04
Standard Package 2,300 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 893052-S34MS04G200BHI003
Ultra Librarian 3D Model Ultra Librarian S34MS04G200BHI003 CAD Model

Description

The S34MS04G200BHI003 is a 4Gbit FLASH - NAND memory integrated circuit (IC) from Cypress Semiconductor Corp.

  • Memory Type: Non-volatile
  • Voltage Supply Range: 1.7V to 1.95V
  • Memory Organization: 512M x 8
  • Memory Format: FLASH
  • Access Time: 45ns
  • Write Cycle Time (Word/Page): 45ns
  • Memory Interface: Parallel
  • Package: 63-VFBGA
  • Operating Temperature Range: -40°C to 85°C
  • Suitable for: High-density data storage and fast data access
  • Status: Discontinued
  • MSL: 3 (168-hour rating)

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