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S34ML04G200BHI003

Part No S34ML04G200BHI003
Manufacturer Cypress Semiconductor Corp
Catalog Memory
Description IC FLASH 4GBIT PARALLEL 63BGA / FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-BGA (11x9)
Sample
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Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series ML-2
Package Tape & Reel (TR)
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gb (512M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 63-VFBGA
Supplier Device Package 63-BGA (11x9)
ECCN 3A991B1A
HTSUS 8542.32.0071
Other Names 2832-S34ML04G200BHI003-TR
Standard Package 75
Win Source Part Number 1147307-S34ML04G200BHI003
Ultra Librarian 3D Model Ultra Librarian S34ML04G200BHI003 CAD Model

Description

The S34ML04G200BHI003 is a 4-Gigabit (512M x 8) Single-Level Cell (SLC) NAND Flash memory device manufactured by Cypress Semiconductor (now Infineon). It is designed for high-performance, high-reliability data storage in embedded systems.

Applications:

  • Solid State Drives (SSDs): Used as boot or cache memory in low-capacity SSDs.
  • Embedded Systems: Employed in industrial control systems, networking equipment, and automotive applications for storing firmware and data.
  • Data Loggers: Integrated into data loggers for reliable storage of sensor data and other information.
  • Medical Devices: Utilized in medical devices for storing patient data and application software.
  • Handheld Devices: Found in portable devices such as GPS units and barcode scanners for storing maps, firmware, and user data.

Features:

  • 4-Gigabit (512M x 8) Capacity: Provides a large storage capacity for embedded applications.
  • Single-Level Cell (SLC) Technology: Offers high endurance and data retention compared to multi-level cell (MLC) NAND flash.
  • Page Size: Typically features a page size of 2 KB + 64 bytes for efficient data access.
  • Block Size: Organized into blocks of 64 pages each for efficient erase operations.
  • Fast Program and Erase Times: Enables quick data writing and erasing operations.
  • High Endurance: Supports a high number of program/erase cycles, ensuring long-term reliability.
  • Operating Voltage: Operates at a standard 3.3V supply voltage.

Benefits:

  • High Reliability: SLC technology ensures high data integrity and long-term data retention.
  • Fast Performance: Quick program and erase times improve system responsiveness.
  • Large Capacity: 4-Gigabit capacity provides ample storage space for embedded applications.
  • Long Endurance: High endurance rating ensures reliable operation over the device's lifetime.
  • Cost-Effective: Provides a cost-effective storage solution for embedded systems.

Additional Details:

The S34ML04G200BHI003 typically features a standard NAND flash interface for easy integration with microcontrollers and processors. It is available in various package options, such as TSOP and BGA. Refer to the Cypress/Infineon datasheet for specific electrical characteristics, timing diagrams, and application notes.

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4+ $14.1965 $56.7860
8+ $13.2980 $106.3840
12+ $12.8487 $154.1844
17+ $11.9502 $203.1534
22+ $11.5009 $253.0198
28+ $11.0517 $309.4476
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Availability: 5,860 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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