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Same model may have multiple batches, images only for reference.
S29GL512T13DHNV23 Real Image
Same model may have multiple batches, images only for reference.

S29GL512T13DHNV23

Part No S29GL512T13DHNV23
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 130 ns 64-FBGA (9x9)
Datasheet
S29GL512T13DHNV23 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 130 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL512
Standard Package 2,200
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254819-S29GL512T13DHNV23
Ultra Librarian 3D Model Ultra Librarian S29GL512T13DHNV23 CAD Model

Description

The S29GL512T13DHNV23 is a non-volatile FLASH-NOR memory chip from Cypress Semiconductor Corp.

  • Series: GL-T series
  • Memory Size: 512Mb (64M x 8)
  • Access Time: 130 ns
  • Voltage Range: 1.65V to 3.6V
  • Write Cycle Time: 60ns
  • Memory Interface: parallel
  • Package: 64-LBGA
  • Suitable Use: in a wide range of applications, including automotive, industrial, and consumer electronics
  • Description: a reliable and high-performance memory chip that can store a large amount of data

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