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CY7C198-25DMB

Part No CY7C198-25DMB
Manufacturer Cypress Semiconductor Corp
Catalog END - OF - LIFE
Description 32K x 8 Static RAM
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Manufacturer Cypress Semiconductor Corp
Win Source Part Number 1165341-CY7C198-25DMB
Manufacturer Homepage www.cypress.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CY7C198-25DMB CAD Model

Description

The CY7C198-25DMB is a high-performance Static Random Access Memory (SRAM) manufactured by Cypress Semiconductor Corp. This SRAM is designed for applications requiring fast access times and reliable data storage. Its combination of speed, density, and robust design makes it well-suited for use in various embedded systems, industrial controls, and other demanding applications.

Applications

  • Embedded Systems
  • Industrial Control Systems
  • Networking Equipment
  • Cache Memory
  • Military and Aerospace Applications

Features

  • Fast Access Time: 25 ns
  • Low Power Consumption
  • TTL-Compatible Inputs and Outputs
  • Single 5V Power Supply
  • Available in Ceramic DIP Package

Benefits

  • High-Speed Performance: The 25 ns access time enables rapid data retrieval and processing, significantly improving system performance.
  • Power Efficiency: Low power consumption minimizes energy usage, making it suitable for battery-powered and energy-conscious applications.
  • Easy Integration: TTL-compatible inputs and outputs simplify interfacing with other digital components, reducing design complexity.
  • Robust Design: The ceramic DIP package provides enhanced durability and resistance to environmental factors, ensuring reliable operation in harsh conditions.
  • Versatile Applications: Suitable for a wide range of applications, from embedded control to high-performance caching.

Additional Details

The CY7C198-25DMB utilizes advanced CMOS technology. The specific memory organization can be found in the official Cypress Semiconductor datasheet. Always consult the datasheet for detailed electrical characteristics, timing specifications, and application guidelines.

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