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CY7C1311BV18-250BZC

Part No CY7C1311BV18-250BZC
Manufacturer Cypress Semiconductor Corp
Catalog END - OF - LIFE
Description 18-Mbit QDR-II SRAM 4-Word Burst Architecture
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Manufacturer Cypress Semiconductor Corp
Win Source Part Number 1164922-CY7C1311BV18-250BZC
Manufacturer Homepage www.cypress.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CY7C1311BV18-250BZC CAD Model

Description

The CY7C1311BV18-250BZC is a high-performance synchronous pipelined burst SRAM (Static Random-Access Memory) from Cypress Semiconductor. This SRAM is designed for applications requiring high bandwidth and fast access times, making it suitable for networking, telecommunications, and high-performance computing systems. It operates at a high clock frequency and provides a wide data bus for rapid data transfer.

Applications:

  • Networking equipment (routers, switches)
  • Telecommunications systems
  • High-performance computing
  • Data storage and retrieval
  • Digital signal processing (DSP)

Features:

  • High-speed clock frequency: 250 MHz
  • Synchronous operation: Ensures precise data transfer synchronized with the clock signal.
  • Pipelined burst architecture: Enables continuous data flow and high throughput.
  • 18-bit data bus width: Allows for parallel data transfer, enhancing bandwidth.
  • On-chip address and control registers: Simplifies memory management and control.
  • Low operating voltage: 1.8V core power supply to minimize power consumption.
  • Available in a BGA (Ball Grid Array) package: Facilitates easy surface mounting and efficient heat dissipation.

Benefits:

  • Increased system performance: High clock frequency and pipelined burst architecture contribute to faster data access and processing.
  • Improved data throughput: Wide data bus enables rapid data transfer, maximizing bandwidth.
  • Simplified system design: On-chip features streamline memory management and control.
  • Reduced power consumption: Low operating voltage minimizes power dissipation, improving energy efficiency.
  • Enhanced reliability: Robust design and manufacturing processes ensure dependable operation.

Additional Details:

The CY7C1311BV18-250BZC is organized internally to support high-speed data access. The synchronous operation simplifies memory control and timing, while the pipelined burst architecture allows for continuous data flow. The device is fabricated using advanced CMOS technology to optimize performance and power efficiency. It is packaged in a BGA, which provides excellent thermal characteristics and simplifies PCB layout. Its end-of-life status suggests that designers should consider newer, more readily available memory solutions for new designs.

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